2001. 6. 26 1/3 semiconductor technical data KTA1532T epitaxial planar pnp transistor revision no : 0 relay drivers, lamp drivers, motor drivers application. features adoption of mbit processes. large current capacitance. low collector-to-emitter saturation voltage. high-speed switching. ultrasmall package facilitates miniaturization in end products. high allowable power dissipation. complementary to ktc3532t. maximum rating (ta=25 1 ) dim millimeters a b d e tsm 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k0.60 l0.55 a f g g d k b e c l h j j i 2 1 3 + _ + _ + _ + _ + _ 1. emitter 2. base 3. collector electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current dc i c -1.5 a pulse i cp -3 a base current i b -300 ma collector power dissipation p c * 0.9 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 * package mounted on a ceramic board (600 m ' 0.8 j ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-12v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-4v, i c =0 - - -0.1 a collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -20 - - v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -20 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 - - v collector-emitter saturation voltage v ce(sat) i c =-750ma, i b =-15ma - -120 -180 mv base-emitter saturation voltage v be(sat) i c =-750ma, i b =-15ma - -0.85 -1.2 v dc current gain h fe v ce =-2v, i c =-100ma 200 - 560 transition frequency f t v ce =-2v, i c =-300ma - 210 - mhz collector output capacitance c ob v cb =-10v, f=1mhz - 30 - pf swiitching time turn-on time t on - 50 - ns storage time t stg - 90 - fall time t f - 15 - type name marking lot no. s b i b1 b2 i input output 50 ? 220 f pw=20 s dc 1% 470 f r v b r l r be v =5v cc v =-5v -20i =20i =i =-750ma b1 b2 c < =
2001. 6. 26 2/3 KTA1532T revision no : 0 v - i c collector current i (a) c collector current i (a) collector-emitter voltage v (v) 0 ce 0 i - v c ce -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -0.2 -0.4 -0.6 -1.0 -0.8 -1.2 -1.4 -1.8 -1.6 -2.0 ce(sat) c dc current gain h fe collector current i (a) c ce(sat) collector-emitter saturation i =0ma -2ma -4ma -6ma -8ma -10ma -20ma -50ma -30ma -40ma b c collector current i (a) base-emitter voltage v (v) 0 be 0 i - v c be -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -0.2 -0.3 -0.5 -0.4 -0.6 -0.7 -0.9 -0.8 -1.0 -10 -30 -50 -100 -300 -1k -500 voltage v (mv) -0.01 -0.03 -0.1 -1 -3 -0.3 v - i c collector current i (a) be(sat) c be(sat) base-emitter saturation -0.1 -0.3 -0.5 -1 -3 -10 -5 voltage v (v) -0.01 -0.03 -0.1 -1 -3 -0.3 -0.01 -0.03 -0.1 -1 -3 -0.3 t a=75 c i /i =20 cb i /i =50 ta = 75 c ta = 2 5 c ta=-25 c cb i /i =50 cb t a=7 5 c ta=25 c ta=-25 c ta=- 25 c ta=25 c 30 1k h - i fe c 50 100 300 500 -0.01 -0.03 -0.1 -1 -3 -0.3 ta=-25 c v =-2v ce ta=75 c ta=25 c collector-emitter saturation -5 ce(sat) collector current i (a) c v - i ce(sat) c voltage v (mv) -10 -30 -50 -100 -300 -500 ta= 75 c ta =25 c ta= -25 c v =-2v ce
2001. 6. 26 3/3 KTA1532T revision no : 0 collector output capacitance ob collector-base voltage v (v) cb transition frequency f (mhz) t collector current i (a) c c (pf) c collector power dissipation p (w) ambient temperature ta ( c) 0 0 pc - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 mounted on a mounted on a ceramic board ceramic board (600mm ` 0.8mm) c - v ob cb -0.1 -0.3 -1 -10 -30 -3 30 1k f - i t c 50 100 300 500 -0.01 -0.03 -0.1 -1 -3 -0.3 v =-2v f=1mhz ce 3 100 5 10 30 50 -1 -3 -5 -30 -10 collector current i (a) c collector-emitter voltage v (v) ce safe operating area -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c i max (continuous) c 1 00ms* 10ms* 1m s* 50 0 s* 100 s* dc operat io n 2 (600mm ` 0.8mm) 2
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